Invention Grant
- Patent Title: Semiconductor process
- Patent Title (中): 半导体工艺
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Application No.: US13248011Application Date: 2011-09-28
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Publication No.: US08765588B2Publication Date: 2014-07-01
- Inventor: Pong-Wey Huang , Chan-Lon Yang , Chang-Hung Kung , Wei-Hsin Liu , Ya-Hsueh Hsieh , Bor-Shyang Liao , Teng-Chun Hsuan , Chun-Yao Yang
- Applicant: Pong-Wey Huang , Chan-Lon Yang , Chang-Hung Kung , Wei-Hsin Liu , Ya-Hsueh Hsieh , Bor-Shyang Liao , Teng-Chun Hsuan , Chun-Yao Yang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763
Abstract:
A semiconductor process includes the following steps. An interdielectric layer is formed on a substrate and the interdielectric layer has a first recess and a second recess. A metal layer is formed to cover the surface of the interdielectric layer, the first recess and the second recess. Partially fills a sacrificed material into the first recess and the second recess so that a portion of the metal layer in each of the recesses is respectively covered. The uncovered metal layer in each of the recesses is removed. The sacrificed material is removed. An etching process is performed to remove the remaining metal layer in the first recess and reserve the remaining metal layer in the second recess.
Public/Granted literature
- US20130078792A1 SEMICONDUCTOR PROCESS Public/Granted day:2013-03-28
Information query
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