Invention Grant
- Patent Title: Charged particle beam device
- Patent Title (中): 带电粒子束装置
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Application No.: US12688095Application Date: 2010-01-15
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Publication No.: US08766185B2Publication Date: 2014-07-01
- Inventor: Tomokazu Shimakura , Masaki Hasegawa
- Applicant: Tomokazu Shimakura , Masaki Hasegawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2009-009798 20090120
- Main IPC: G01N23/225
- IPC: G01N23/225 ; H01J37/02 ; H01J37/20 ; H01J37/28

Abstract:
The charged particle beam device has an unlimitedly rotatable sample stage and an electric field control electrode for correcting electric field distortion at a sample peripheral part. A voltage is applied to a sample on the unlimitedly rotatable sample stage through a retarding electrode that is in contact with a holder receiver at a rotation center of a rotary stage. An equipotential plane on the electric field control electrode is varied by applying a voltage to the electric field control electrode, and following this the equipotential plane at a sample edge is corrected, which enables the sample to be observed as far as its edge.
Public/Granted literature
- US20100181480A1 CHARGED PARTICLE BEAM DEVICE Public/Granted day:2010-07-22
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