Invention Grant
US08771495B2 Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
有权
用基于二吡啶基的矫直剂在微电子学中电沉积铜的方法和组合物
- Patent Title: Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
- Patent Title (中): 用基于二吡啶基的矫直剂在微电子学中电沉积铜的方法和组合物
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Application No.: US13785946Application Date: 2013-03-05
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Publication No.: US08771495B2Publication Date: 2014-07-08
- Inventor: Vincent Paneccasio, Jr. , Xuan Lin , Richard Hurtubise , Qingyun Chen
- Applicant: Enthone Inc.
- Applicant Address: US CT West Haven
- Assignee: Enthone Inc.
- Current Assignee: Enthone Inc.
- Current Assignee Address: US CT West Haven
- Agency: Senniger Powers LLP
- Main IPC: C25D5/02
- IPC: C25D5/02 ; C25D3/38 ; H05K3/42
Abstract:
A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Public/Granted literature
- US20130241060A1 METHOD AND COMPOSITION FOR ELECTRODEPOSITION OF COPPER IN MICROELECTRONICS WITH DIPYRIDYL-BASED LEVELERS Public/Granted day:2013-09-19
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