Invention Grant
US08771632B2 Methods of forming metal oxide nanostructures, and nanostructures thereof
有权
形成金属氧化物纳米结构的方法及其纳米结构
- Patent Title: Methods of forming metal oxide nanostructures, and nanostructures thereof
- Patent Title (中): 形成金属氧化物纳米结构的方法及其纳米结构
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Application No.: US13571791Application Date: 2012-08-10
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Publication No.: US08771632B2Publication Date: 2014-07-08
- Inventor: Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
- Applicant: Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Main IPC: C01G23/00
- IPC: C01G23/00 ; B05D3/06
Abstract:
A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.
Public/Granted literature
- US20120308476A1 METHODS OF FORMING METAL OXIDE NANOSTRUCTURES, AND NANOSTRUCTURES THEREOF Public/Granted day:2012-12-06
Information query
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