Invention Grant
- Patent Title: Filling cavities in semiconductor structures having adhesion promoting layer in the cavities
- Patent Title (中): 在空腔中的具有粘附促进层的半导体结构中填充腔
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Application No.: US12948897Application Date: 2010-11-18
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Publication No.: US08772155B2Publication Date: 2014-07-08
- Inventor: Shai Haimson , Avi Rozenblat , Dror Horvitz , Maor Rotlain , Rotem Drori
- Applicant: Shai Haimson , Avi Rozenblat , Dror Horvitz , Maor Rotlain , Rotem Drori
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44
Abstract:
High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
Public/Granted literature
- US20120126415A1 Filling Cavities in Semiconductor Structures Public/Granted day:2012-05-24
Information query
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