Invention Grant
- Patent Title: Anti-fuse structure and anti-fuse programming method
- Patent Title (中): 防熔丝结构和反熔丝编程方法
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Application No.: US13726242Application Date: 2012-12-24
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Publication No.: US08772907B1Publication Date: 2014-07-08
- Inventor: Chih-Yuan Ho
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
An anti-fuse structure includes a substrate having at least a shallow trench isolation formed therein, a notch formed between the substrate and the STI, an electrode structure formed on the substrate, the electrode structure filling the notch, and a doped region formed in the substrate on a side of the electrode structure opposite to the notch.
Public/Granted literature
- US20140175601A1 ANTI-FUSE STRUCTURE AND ANTI-FUSE PROGRAMMING METHOD Public/Granted day:2014-06-26
Information query
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