Invention Grant
- Patent Title: Single photoresist approach for high challenge photo process
- Patent Title (中): 单光致抗蚀剂方法，用于高挑战照相工艺
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Application No.: US12562248Application Date: 2009-09-18
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Publication No.: US08778602B2Publication Date: 2014-07-15
- Inventor: Hung-Ting Pan , Jing-Huan Chen , Wei-Chung Ma , Hsin-Chun Chiang , Po-Chung Cheng , Szu-An Wu
- Applicant: Hung-Ting Pan , Jing-Huan Chen , Wei-Chung Ma , Hsin-Chun Chiang , Po-Chung Cheng , Szu-An Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/30
- IPC: G03F7/30
Abstract:
A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.
Public/Granted literature
- US20110070546A1 SINGLE PHOTORESIST APPROACH FOR HIGH CHALLENGE PHOTO PROCESS Public/Granted day:2011-03-24
Information query
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