Invention Grant
- Patent Title: Plasma treatment method
- Patent Title (中): 等离子体处理方法
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Application No.: US13380843Application Date: 2010-06-25
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Publication No.: US08778810B2Publication Date: 2014-07-15
- Inventor: Hiroyuki Takaba
- Applicant: Hiroyuki Takaba
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- International Application: PCT/US2010/001832 WO 20100625
- International Announcement: WO2010/151336 WO 20101229
- Main IPC: H01L21/26
- IPC: H01L21/26
Abstract:
A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx1) layer using plasma excited by microwave power and forming a second fluorocarbon (CFx2) layer using plasma excited by an RF power.
Public/Granted literature
- US20120098147A1 PLASMA TREATMENT METHOD Public/Granted day:2012-04-26
Information query
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