Invention Grant
US08785889B2 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
有权
用于在离子注入系统中增加离子源的寿命和性能的方法和装置
- Patent Title: Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
- Patent Title (中): 用于在离子注入系统中增加离子源的寿命和性能的方法和装置
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Application No.: US13840961Application Date: 2013-03-15
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Publication No.: US08785889B2Publication Date: 2014-07-22
- Inventor: Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
- Applicant: Advanced Technology Materials, Inc.
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Hultquist, PLLC
- Agent Steven J. Hultquist; Rosa Yaghmour
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01L21/265
Abstract:
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Public/Granted literature
- US20130206788A1 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM Public/Granted day:2013-08-15
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