公开(公告)号：US08779383B2

公开(公告)日：2014-07-15

申请号：US13898809

申请日：2013-05-21

Applicant: Advanced Technology Materials, Inc.

Inventor： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

IPC: H01J27/02 ,  H01L21/265 ,  G21K5/00

CPC classification number: H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。

公开(公告)号：US20150037511A1

公开(公告)日：2015-02-05

申请号：US14378652

申请日：2013-02-14

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Richard S. Ray

IPC: H01J37/317 ,  C23C14/54 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  C23C14/06

CPC classification number: H01J37/3171 ,  C23C14/0694 ,  C23C14/48 ,  C23C14/52 ,  C23C14/54 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/022

Abstract: Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.

Abstract translation: 代替磷组分作为磷掺杂剂源组合物利用磷氟化物的系统和方法，以减少离子注入系统中不想要的磷沉积物的积聚。 氟化磷可以包括PF 3和/或PF 5。 氟化磷和磷化氢可以共同流到离子注入机，或者每种这样的磷掺杂剂源材料可以交替地和顺序地流动到离子注入机，以实现在植入器中磷固体的不希望的累积相对于相对于 相应的处理系统仅使用磷化氢作为磷掺杂剂源材料。

公开(公告)号：US20140090598A1

公开(公告)日：2014-04-03

申请号：US14095575

申请日：2013-12-03

Applicant: Advanced Technology Materials, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US08785889B2

公开(公告)日：2014-07-22

申请号：US13840961

申请日：2013-03-15

Applicant: Advanced Technology Materials, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/265

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract translation: 通过利用同位素富集的掺杂剂材料或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

公开(公告)号：US20130206788A1

公开(公告)日：2013-08-15

申请号：US13840961

申请日：2013-03-15

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: F17C7/00

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US20130264492A1

公开(公告)日：2013-10-10

申请号：US13898809

申请日：2013-05-21

Applicant: Advanced Technology Materials, Inc.

Inventor： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

IPC: H01L21/302

CPC classification number: H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。