Invention Grant
- Patent Title: Deep ultraviolet light emitting diode
- Patent Title (中): 深紫外线发光二极管
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Application No.: US13623381Application Date: 2012-09-20
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Publication No.: US08791450B2Publication Date: 2014-07-29
- Inventor: Michael Shur , Remigijus Gaska , Jinwei Yang
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L33/26
- IPC: H01L33/26
Abstract:
A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.
Public/Granted literature
- US20130075691A1 Deep Ultraviolet Light Emitting Diode Public/Granted day:2013-03-28
Information query
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