Invention Grant
US08796105B2 Method and apparatus for preparing polysilazane on a semiconductor wafer
有权
在半导体晶片上制备聚硅氮烷的方法和装置
- Patent Title: Method and apparatus for preparing polysilazane on a semiconductor wafer
- Patent Title (中): 在半导体晶片上制备聚硅氮烷的方法和装置
-
Application No.: US13558284Application Date: 2012-07-25
-
Publication No.: US08796105B2Publication Date: 2014-08-05
- Inventor: You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
- Applicant: You-Hua Chou , Chih-Tsung Lee , Min-Hao Hong , Ming-Huei Lien , Chih-Jen Wu , Chen-Ming Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
Public/Granted literature
- US20140030866A1 METHOD AND APPARATUS FOR PREPARING POLYSILAZANE ON A SEMICONDUCTOR WAFER Public/Granted day:2014-01-30
Information query
IPC分类:
