Invention Grant
US08801274B2 Time-related temperature variation transducer, electronic chip incorporating this transducer and method of fabrication of this chip
有权
时间相关的温度变化传感器，包含该传感器的电子芯片和该芯片的制造方法
- Patent Title: Time-related temperature variation transducer, electronic chip incorporating this transducer and method of fabrication of this chip
- Patent Title (中): 时间相关的温度变化传感器，包含该传感器的电子芯片和该芯片的制造方法
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Application No.: US13101478Application Date: 2011-05-05
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Publication No.: US08801274B2Publication Date: 2014-08-12
- Inventor: Jean-Francois Mainguet , Alain Chambron , Bruno Charrat , Emmanuel Defay , Guy-Michel Parat
- Applicant: Jean-Francois Mainguet , Alain Chambron , Bruno Charrat , Emmanuel Defay , Guy-Michel Parat
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Occhiuti & Rohlicek LLP
- Priority: FR1053554 20100506
- Main IPC: G01K3/04
- IPC: G01K3/04 ; G01K7/00 ; G01J5/10
Abstract:
A transducer for transducing time-related temperature variations into a difference in potentials includes an upper conductive electrode designed to be exposed to a time-related temperature variation to be measured, a lower conductive electrode, and at least one layer of pyroelectric material based on a III-V nitride directly interposed between the upper and lower conductive electrodes to generate, between the upper and lower conductive electrodes, a difference in potentials corresponding to the temperature variation even in the absence of external mechanical stress.
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