Invention Grant
US08809803B2 Inductively coupled plasma ion source with multiple antennas for wide ion beam
有权
具有多个天线的电感耦合等离子体离子源用于宽离子束
- Patent Title: Inductively coupled plasma ion source with multiple antennas for wide ion beam
- Patent Title (中): 具有多个天线的电感耦合等离子体离子源用于宽离子束
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Application No.: US13961060Application Date: 2013-08-07
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Publication No.: US08809803B2Publication Date: 2014-08-19
- Inventor: Costel Biloiu , Joseph C. Olson , Edward W. Bell , Manny Sieradzki
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J27/00
- IPC: H01J27/00 ; H01J37/08

Abstract:
A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.
Public/Granted literature
- US20140042337A1 INDUCTIVELY COUPLED PLASMA ION SOURCE WITH MULTIPLE ANTENNAS FOR WIDE ION BEAM Public/Granted day:2014-02-13
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