Invention Grant
- Patent Title: Broad band structures for surface enhanced raman spectroscopy
- Patent Title (中): 用于表面增强拉曼光谱的宽带结构
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Application No.: US13254897Application Date: 2009-03-13
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Publication No.: US08810788B2Publication Date: 2014-08-19
- Inventor: Zhiyong Li , Min Hu
- Applicant: Zhiyong Li , Min Hu
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/037167 WO 20090313
- International Announcement: WO2010/104520 WO 20100916
- Main IPC: G01J3/44
- IPC: G01J3/44 ; G01N21/65 ; G01N21/55

Abstract:
Broad band structures for surface enhanced Raman spectroscopy are disclosed herein. Each embodiment of the structure is made up of a metal layer, and a dielectric layer established on at least a portion of the metal layer. The dielectric layer has a controlled thickness that varies from at least one portion of the dielectric layer to at least another portion of the dielectric layer. Nanostructures are established on the dielectric layer at least at the portion and the other portion, the nanostructures thus being configured to exhibit variable plasmon resonances.
Public/Granted literature
- US20110317160A1 BROAD BAND STRUCTURES FOR SURFACE ENHANCED RAMAN SPECTROSCOPY Public/Granted day:2011-12-29
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