Invention Grant
- Patent Title: Gate structure of semiconductor device
- Patent Title (中): 半导体器件的栅极结构
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Application No.: US12907036Application Date: 2010-10-19
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Publication No.: US08816439B2Publication Date: 2014-08-26
- Inventor: Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
- Applicant: Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/11
Abstract:
A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.
Public/Granted literature
- US20110031558A1 GATE STRUCTURE OF SEMICONDUCTOR DEVICE Public/Granted day:2011-02-10
Information query
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