Invention Grant
- Patent Title: Compensation of stress effects on pressure sensor components
- Patent Title (中): 对压力传感器部件的应力影响的补偿
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Application No.: US13851040Application Date: 2013-03-26
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Publication No.: US08820169B2Publication Date: 2014-09-02
- Inventor: Richard J. August , Michael B. Doelle
- Applicant: Silicon Microstructures, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Silicon Microstructures, Inc.
- Current Assignee: Silicon Microstructures, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G01L19/04
- IPC: G01L19/04 ; G01L9/02

Abstract:
Pressure sensors having components with reduced variations due to stresses caused by various layers and components that are included in the manufacturing process. In one example, a first stress in a first direction causes a variation in a component. A second stress in a second direction is applied, thereby reducing the variation in the component. The first and second stresses may be caused by a polysilicon layer, while the component may be a resistor in a Wheatstone bridge.
Public/Granted literature
- US20130341740A1 COMPENSATION OF STRESS EFFECTS ON PRESSURE SENSOR COMPONENTS Public/Granted day:2013-12-26
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