Invention Grant
- Patent Title: Thermal annealing process
- Patent Title (中): 热退火工艺
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Application No.: US13547230Application Date: 2012-07-12
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Publication No.: US08821738B2Publication Date: 2014-09-02
- Inventor: Phillip D. Hustad , Xinyu Gu , Shih-Wei Chang , Jeffrey D. Weinhold , Peter Trefonas
- Applicant: Phillip D. Hustad , Xinyu Gu , Shih-Wei Chang , Jeffrey D. Weinhold , Peter Trefonas
- Applicant Address: US MA Marlborough US MI Midland
- Assignee: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- Current Assignee Address: US MA Marlborough US MI Midland
- Agent Thomas S. Deibert
- Main IPC: B44C1/22
- IPC: B44C1/22 ; B05D3/02 ; B81C1/00 ; B82Y40/00 ; C09D183/00 ; C23C18/00
Abstract:
A method for processing a substrate is provided; wherein the method comprises applying a film of a copolymer composition, comprising a poly(styrene)-b-poly(siloxane) block copolymer component; and, an antioxidant to a surface of the substrate; optionally, baking the film; annealing the film in a gaseous atmosphere containing ≧20 wt % oxygen; followed by a treatment of the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.
Public/Granted literature
- US20140014001A1 Thermal annealing process Public/Granted day:2014-01-16
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