Invention Grant
- Patent Title: Method of forming dielectric layer with a dielectric composition
- Patent Title (中): 用电介质组合物形成电介质层的方法
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Application No.: US12957461Application Date: 2010-12-01
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Publication No.: US08821962B2Publication Date: 2014-09-02
- Inventor: Yiliang Wu , Yulin Wang , Ping Liu , Nan-Xing Hu , Anthony James Wigglesworth
- Applicant: Yiliang Wu , Yulin Wang , Ping Liu , Nan-Xing Hu , Anthony James Wigglesworth
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: B05D5/12
- IPC: B05D5/12 ; B05D3/02 ; H01L51/05 ; H01L51/00

Abstract:
An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.
Public/Granted literature
- US20120141757A1 DIELECTRIC COMPOSITION Public/Granted day:2012-06-07
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