Invention Grant
US08822284B2 Method for fabricating FinFETs and semiconductor structure fabricated using the method
有权
使用该方法制造FinFET和半导体结构的方法
- Patent Title: Method for fabricating FinFETs and semiconductor structure fabricated using the method
- Patent Title (中): 使用该方法制造FinFET和半导体结构的方法
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Application No.: US13370231Application Date: 2012-02-09
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Publication No.: US08822284B2Publication Date: 2014-09-02
- Inventor: Chin-Fu Lin , Chin-Cheng Chien , Chun-Yuan Wu , Teng-Chun Tsai , Chih-Chien Liu
- Applicant: Chin-Fu Lin , Chin-Cheng Chien , Chun-Yuan Wu , Teng-Chun Tsai , Chih-Chien Liu
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L21/02 ; H01L21/3115 ; H01L21/311 ; H01L21/318 ; H01L21/314
Abstract:
A method for fabricating FinFETs is described. A semiconductor substrate is patterned to form odd fins. Spacers are formed on the substrate and on the sidewalls of the odd fins, wherein each spacer has a substantially vertical sidewall. Even fins are then formed on the substrate between the spacers. A semiconductor structure for forming FinFETs is also described, which is fabricated using the above method.
Public/Granted literature
- US20130207122A1 METHOD FOR FABRICATING FINFETS AND SEMICONDUCTOR STRUCTURE FABRICATED USING THE METHOD Public/Granted day:2013-08-15
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