Invention Grant
- Patent Title: Through-silicon via forming method
- Patent Title (中): 通硅成型方法
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Application No.: US13161849Application Date: 2011-06-16
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Publication No.: US08822336B2Publication Date: 2014-09-02
- Inventor: Teng-Chun Tsai , Chun-Yuan Wu , Chin-Fu Lin , Chih-Chien Liu , Chin-Cheng Chien
- Applicant: Teng-Chun Tsai , Chun-Yuan Wu , Chin-Fu Lin , Chih-Chien Liu , Chin-Cheng Chien
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L21/283
- IPC: H01L21/283
Abstract:
A through-silicon via forming method includes the following steps. Firstly, a semiconductor substrate is provided. Then, a through-silicon via conductor is formed in the semiconductor substrate, and a topside of the through-silicon via conductor is allowed to be at the same level as a surface of the semiconductor substrate. Afterwards, a portion of the through-silicon via conductor is removed, and the topside of the through-silicon via conductor is allowed to be at a level lower than the surface of the semiconductor substrate, so that a recess is formed over the through-silicon via conductor.
Public/Granted literature
- US20120322260A1 THROUGH-SILICON VIA FORMING METHOD Public/Granted day:2012-12-20
Information query
IPC分类:
