Invention Grant
- Patent Title: Manufacturing method for dual damascene structure
- Patent Title (中): 双镶嵌结构的制造方法
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Application No.: US13218458Application Date: 2011-08-26
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Publication No.: US08828878B2Publication Date: 2014-09-09
- Inventor: Duan Quan Liao , Yikun Chen , Xiao Zhong Zhu , Ching-Hwa Tey , Chen-Hua Tsai , Yu-Tsung Lai
- Applicant: Duan Quan Liao , Yikun Chen , Xiao Zhong Zhu , Ching-Hwa Tey , Chen-Hua Tsai , Yu-Tsung Lai
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/311 ; H01L21/768
Abstract:
A manufacturing method for a dual damascene structure first includes providing a substrate having at least a dielectric layer, a first hard mask layer, a first cap layer, a second hard mask layer, and a second cap layer sequentially formed thereon, performing a first double patterning process to form a plurality of first trench openings and second trench openings in the second cap layer and the second hard mask, and the first layer being exposed in bottoms of the first trench openings and the second trench openings, performing a second double patterning process to form a plurality of first via openings and second via openings in the first cap layer and the first hard mask layer, and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings.
Public/Granted literature
- US20120309199A1 MANUFACTURING METHOD FOR DUAL DAMASCENE STRUCTURE Public/Granted day:2012-12-06
Information query
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