Invention Grant
US08832508B2 Apparatus and methods for testing writability and readability of memory cell arrays
有权
用于测试记忆单元阵列的可编写性和可读性的装置和方法
- Patent Title: Apparatus and methods for testing writability and readability of memory cell arrays
- Patent Title (中): 用于测试记忆单元阵列的可编写性和可读性的装置和方法
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Application No.: US12949574Application Date: 2010-11-18
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Publication No.: US08832508B2Publication Date: 2014-09-09
- Inventor: Carson Henrion , Michael Dreesen
- Applicant: Carson Henrion , Michael Dreesen
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Mahamedi Paradice LLP
- Main IPC: G11C29/04
- IPC: G11C29/04 ; G11C7/10 ; G11C29/26 ; G11C29/56

Abstract:
Apparatus and methods are provided for concurrently selecting multiple arrays of memory cells when accessing a memory element. A memory element includes a first array of one or more memory cells coupled to a first bit line node, a second array of one or more memory cells coupled to a second bit line node, access circuitry for accessing a first memory cell in the first array, a first transistor coupled between the first bit line node and the access circuitry, and a second transistor coupled between the second bit line node and the access circuitry. A controller is coupled to the first transistor and the second transistor, and the controller is configured to concurrently activate the first transistor and the second transistor to access the first memory cell in the first array.
Public/Granted literature
- US20120131399A1 APPARATUS AND METHODS FOR TESTING MEMORY CELLS Public/Granted day:2012-05-24
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