Invention Grant
- Patent Title: Technique for forming a passivation layer without a terminal metal
- Patent Title (中): 用于形成无终端金属的钝化层的技术
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Application No.: US11750567Application Date: 2007-05-18
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Publication No.: US08841140B2Publication Date: 2014-09-23
- Inventor: Tobias Letz , Matthias Lehr , Joerg Hohage , Frank Kuechenmeister
- Applicant: Tobias Letz , Matthias Lehr , Joerg Hohage , Frank Kuechenmeister
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams Morgan, P.C.
- Priority: DE102006051490 20061031
- Main IPC: C12Q1/70
- IPC: C12Q1/70 ; H01L23/00 ; H01L23/31

Abstract:
By determining at least one surface characteristic of a passivation layer stack used for forming a bump structure, the situation after the deposition and patterning of a terminal metal layer stack may be “simulated,” thereby providing the potential for using well-established bump manufacturing techniques while nevertheless significantly reducing process complexity by omitting the deposition and patterning of the terminal metal layer stack.
Public/Granted literature
- US20080102540A1 TECHNIQUE FOR FORMING A PASSIVATION LAYER WITHOUT A TERMINAL METAL Public/Granted day:2008-05-01
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