Invention Grant
- Patent Title: Electron beam lithography system and method for improving throughput
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Application No.: US13971629Application Date: 2013-08-20
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Publication No.: US08846278B2Publication Date: 2014-09-30
- Inventor: Jaw-Jung Shin , Shy-Jay Lin , Wen-Chuan Wang , Burn Jeng Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03C5/00 ; H01J37/317 ; H01J37/302
Abstract:
An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.
Public/Granted literature
- US20130330670A1 Electron Beam Lithography System and Method for Improving Throughput Public/Granted day:2013-12-12
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