Invention Grant
- Patent Title: Optoelectronic semiconductor chip
- Patent Title (中): 光电半导体芯片
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Application No.: US13821554Application Date: 2011-08-22
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Publication No.: US08866175B2Publication Date: 2014-10-21
- Inventor: Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
- Applicant: Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102010045784 20100917
- International Application: PCT/EP2011/064386 WO 20110822
- International Announcement: WO2012/034828 WO 20120322
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/62 ; H01L33/38 ; H01L33/40 ; H01L33/44 ; H01L33/22 ; H01L33/20

Abstract:
An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
Public/Granted literature
- US20130228819A1 Optoelectronic Semiconductor Chip Public/Granted day:2013-09-05
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