Invention Grant
- Patent Title: Semiconductor element and operating method thereof
- Patent Title (中): 半导体元件及其操作方法
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Application No.: US13486010Application Date: 2012-06-01
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Publication No.: US08867284B2Publication Date: 2014-10-21
- Inventor: Chin-Fu Chen
- Applicant: Chin-Fu Chen
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A semiconductor element and an operating method thereof are provided. The semiconductor element comprises a first metal oxide semiconductor (MOS) and a second MOS. The second MOS is electrically connected to the first MOS. The second MOS includes a floating bipolar junction transistor (BJT).
Public/Granted literature
- US20130322189A1 SEMICONDUCTOR ELEMENT AND OPERATING METHOD THEREOF Public/Granted day:2013-12-05
Information query
