Invention Grant
US08877299B2 Method for enhancing a substrate using gas cluster ion beam processing
有权
使用气体团簇离子束加工增强基体的方法
- Patent Title: Method for enhancing a substrate using gas cluster ion beam processing
- Patent Title (中): 使用气体团簇离子束加工增强基体的方法
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Application No.: US12415867Application Date: 2009-03-31
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Publication No.: US08877299B2Publication Date: 2014-11-04
- Inventor: John J. Hautala , Nathan E. Baxter , Koji Yamashita
- Applicant: John J. Hautala , Nathan E. Baxter , Koji Yamashita
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: C23C14/02
- IPC: C23C14/02 ; H05H1/24 ; H01L21/263 ; H01J37/08 ; H01J37/317
Abstract:
A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.
Public/Granted literature
- US20100243920A1 METHOD FOR ENHANCING A SUBSTRATE USING GAS CLUSTER ION BEAM PROCESSING Public/Granted day:2010-09-30
Information query
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