Invention Grant
- Patent Title: High voltage device having Schottky diode
- Patent Title (中): 具有肖特基二极管的高压器件
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Application No.: US12884215Application Date: 2010-09-17
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Publication No.: US08878329B2Publication Date: 2014-11-04
- Inventor: Min-Hsuan Tsai
- Applicant: Min-Hsuan Tsai
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/47
- IPC: H01L29/47 ; H01L27/06 ; H01L29/78 ; H01L29/872 ; H01L29/06
Abstract:
A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate covering a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate.
Public/Granted literature
- US20120068297A1 HIGH VOLTAGE DEVICE HAVING SCHOTTKY DIODE Public/Granted day:2012-03-22
Information query
IPC分类:
