Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material in which an enhanced imaging method provides continuous and varying magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways of varying optical paths and imaging devices. Electronic analysis of holographic interference patterns of varying optical probing wavelengths determines and permits the display of internal and external stresses and the various effects of such stresses acting upon the operating characteristics of semiconductor devices, features, interior structures at any stage of development or manufacture.