公开(公告)号：US09366719B2

公开(公告)日：2016-06-14

申请号：US14109362

申请日：2013-12-17

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01B9/02 ,  G01R31/265 ,  G01R15/24 ,  G01R31/311

CPC classification number: G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

Abstract: In decreasing the electron beam duration required for increased time resolution, the average beam current decreases, degrading measurement sensitivity and limiting the spatial and time resolution of electron beam and ion beam devices. Optical to optical measurements using two imaging devices permits non-invasive or non-destructive enhancements permits enhanced spatial and time measurements and enables a new regime of internal device and process evaluation and quality control in integrated circuit (IC) manufacture, at every stage from the initial wafer to the point at which the wafer is diced into individual ICs.

Abstract translation: 在减小增加时间分辨率所需的电子束持续时间的情况下，平均光束电流降低，降低了测量灵敏度并限制了电子束和离子束装置的空间和时间分辨率。 使用两个成像设备的光学到光学测量允许非侵入性或非破坏性增强，允许增强的空间和时间测量，并且能够在集成电路（IC）制造的每个阶段实现内部设备和过程评估和质量控制的新制度 初始晶片到晶片被切割成单个IC的点。

公开(公告)号：US20150041657A1

公开(公告)日：2015-02-12

申请号：US14522334

申请日：2014-10-23

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01B11/16 ,  H01L21/66

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract translation: 用于全息或干涉半导体检测和评估的改进的方法和系统，用于设备开发和制造的所有阶段。 具体地，公开了用于扩展用于测试和评估微电子器件的光学全息干涉测量的范围的系统和方法，并且确定电磁信号和对半导体材料的动态应力的相互作用，其中增强的成像方法提供连续和变化的放大率 的光学全息干涉图像在多个交错光学路径和成像装置上。 一个或多个全息干涉图案的分析显示在开发或制造的任何阶段，该特征，内部结构或半导体器件的内表面内的特征的操作特性的内部和外部应力以及这些应力的各种影响。

公开(公告)号：US09952161B2

公开(公告)日：2018-04-24

申请号：US14984362

申请日：2015-12-30

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01B11/02 ,  G01N21/95 ,  G01B11/24 ,  G01N21/17 ,  G01N21/23 ,  H01L21/66 ,  G01B11/16 ,  G01B9/02 ,  G01B9/021

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: An interferometric holographic instrument enables the generation of digital data for testing and enabling 2-dimensional and 3-dimensional analysis of “live” and real-time semiconductor or anisotropic devices and materials. The digitally recorded interferometric data can be displayed, stored or connected to a live data stream for transmission to digital processing devices. A digital electric processor or analyzer connected to the recording device, or live data stream, enables the interferometric data to be utilized to test, develop, and shape semiconductor and anisotropic microelectronic processing, wireless and microwave devices.

公开(公告)号：US20140103935A1

公开(公告)日：2014-04-17

申请号：US14109362

申请日：2013-12-17

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01R31/265

CPC classification number: G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

Abstract: In decreasing the electron beam duration required for increased time resolution, the average beam current decreases, degrading measurement sensitivity and limiting practical systems to a time resolution of several hundred picoseconds. Optical non-invasive or non-destructive enhancements permits femto-second measurements and a new regime of internal device and process evaluation and quality control in integrated circuit (IC) manufacture, at every stage from the initial wafer to the point at which the wafer is diced into individual ICs.

Abstract translation: 在降低时间分辨率增加所需的电子束持续时间内，平均光束电流降低，测量灵敏度下降，并将实际系统限制在几百皮秒的时间分辨率。 光学非侵入式或非破坏性增强功能允许毫微微秒测量和集成电路（IC）制造中的内部器件和工艺评估和质量控制的新制度，从初始晶片到晶片的每个阶段 切成单个IC。

公开(公告)号：US09250064B2

公开(公告)日：2016-02-02

申请号：US14522334

申请日：2014-10-23

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01B11/02 ,  G01B11/16 ,  G01B11/24 ,  G01N21/17 ,  G01N21/23 ,  H01L21/66 ,  G01N21/95

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.

Abstract translation: 用于全息或干涉半导体检测和评估的改进的方法和系统，用于设备开发和制造的所有阶段。 具体地，公开了用于扩展用于测试和评估微电子器件的光学全息干涉测量的范围的系统和方法，并且确定电磁信号和对半导体材料的动态应力的相互作用，其中增强的成像方法提供连续和变化的放大率 的光学全息干涉图像在多个交错光学路径和成像装置上。 一个或多个全息干涉图案的分析显示在开发或制造的任何阶段，该特征，内部结构或半导体器件的内表面内的特征的操作特性的内部和外部应力以及这些应力的各种影响。

公开(公告)号：US08879071B2

公开(公告)日：2014-11-04

申请号：US13903232

申请日：2013-05-28

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01B11/02 ,  G01B9/02 ,  G01N21/95 ,  G01N21/17 ,  H01L21/66 ,  G01N21/23 ,  G01B11/24

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material in which an enhanced imaging method provides continuous and varying magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways of varying optical paths and imaging devices. Electronic analysis of holographic interference patterns of varying optical probing wavelengths determines and permits the display of internal and external stresses and the various effects of such stresses acting upon the operating characteristics of semiconductor devices, features, interior structures at any stage of development or manufacture.

Abstract translation: 通过使用红外光学和热波长探测对半导体器件开发和制造的所有阶段进行全息或干涉测量评估和测试来解决和确定亚波长尺寸特征和应力的方法和系统。 具体地，公开了用于扩展用于测试和评估微电子器件的光学全息干涉测量的范围的系统和方法，并且确定电磁信号和动态应力与半导体材料的相互作用，其中增强成像方法提供光学的连续和变化的放大倍率 全息干涉图像在不同光路和成像装置的多个交错光路上。 不同光学探测波长的全息干涉图案的电子分析确定并允许显示内部和外部应力以及这些应力的各种影响，其作用于在开发或制造的任何阶段的半导体器件，特征，内部结构的操作特性。

公开(公告)号：US20130337585A1

公开(公告)日：2013-12-19

申请号：US13903232

申请日：2013-05-28

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01N21/95

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: Methods and systems for resolving and determining sub-wavelength sized features and stresses by using infrared optical and thermal wavelength probing for holographic or interferometric evaluation and testing for all phases of semiconductor device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material in which an enhanced imaging method provides continuous and varying magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways of varying optical paths and imaging devices. Electronic analysis of holographic interference patterns of varying optical probing wavelengths determines and permits the display of internal and external stresses and the various effects of such stresses acting upon the operating characteristics of semiconductor devices, features, interior structures at any stage of development or manufacture.

Abstract translation: 通过使用红外光学和热波长探测对半导体器件开发和制造的所有阶段进行全息或干涉测量评估和测试来解决和确定亚波长尺寸特征和应力的方法和系统。 具体地，公开了用于扩展用于测试和评估微电子器件的光学全息干涉测量的范围的系统和方法，并且确定电磁信号和动态应力与半导体材料的相互作用，其中增强成像方法提供光学的连续和变化的放大倍率 全息干涉图像在不同光路和成像装置的多个交错光路上。 不同光学探测波长的全息干涉图案的电子分析确定并允许显示内部和外部应力以及这些应力的各种影响，其作用于在开发或制造的任何阶段的半导体器件，特征，内部结构的操作特性。

公开(公告)号：US20180246045A1

公开(公告)日：2018-08-30

申请号：US15959987

申请日：2018-04-23

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01N21/95 ,  H01L21/66

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: Methods are described for obtaining digital data for determining, shaping or testing a semiconductor or anisotropic device or materials under test or manufacture. Optical interferometric techniques can sense a wide region, such as that passing through or reflected off a semiconductor material, which can then be analyzed. In this manner, various characteristics of the resultant transmitted or reflected probing beam, herein called the “object wave,” are recorded in the resultant interference pattern between the object wave and the reference beam. Likewise, when the semiconductor material, such as an integrated circuit, is stressed by applying a voltage therein by energizing a circuit fabricated therein, the same light will reflect or otherwise pass through the semiconductor material, while being affected by the changes imposed upon or acting within the interior structures or interior surfaces by an applied voltage or signal, or by an incident external stress, thereby resulting in a different pattern.

公开(公告)号：US20160291088A1

公开(公告)日：2016-10-06

申请号：US15178418

申请日：2016-06-09

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01R31/311 ,  G01R31/265

CPC classification number: G01R31/311 ,  G01R15/241 ,  G01R31/2653 ,  G01R31/2656 ,  G03H2260/53

Abstract: The Fast Fourier transform describes functions into different dimensions or coordinates such as Cartesian to spherical. For example, a function could be represented in the domains of time and frequency. The concept of the 3-D FFT has the same form as the mathematical representation of the 2-D FFT utilizing a 1-D FFT. This technique is essentially a spatial filtering operation in which the hologram functions as a matched filter. It has been applied here, to function as 4-D FFT by adding the dimension of time to recognize the presence of a specific electronic circuit and detect the moment when specific voltage levels or signals are present within or acting upon, the circuit or device under test and development. Any dynamic changes in the test object from ideal or recorded conditions, such as by defects in the device under test's circuitry or from prescribed voltage or signal induced operating parameters, will not result in the reconstruction of the desired object wave or holographic image.

Abstract translation: 快速傅里叶变换将功能描述成不同的尺寸或坐标，如笛卡尔到球面。 例如，可以在时间和频率的域中表示功能。 3-D FFT的概念与使用1-D FFT的2-D FFT的数学表示形式相同。 该技术基本上是空间滤波操作，其中全息图用作匹配滤波器。 这里已经应用了4-D FFT，通过添加时间维度来识别特定电子电路的存在，并检测特定电压电平或信号存在于或作用在电路或器件下的时刻 测试和开发。 来自理想或记录条件的测试对象中的任何动态变化（例如被测设备的电路缺陷或者规定的电压或信号诱导的操作参数）都不会导致所需对象波或全息图像的重建。

公开(公告)号：US20160195479A1

公开(公告)日：2016-07-07

申请号：US14984362

申请日：2015-12-30

Applicant: Attofemto, Inc.

Inventor： Paul L. Pfaff

IPC: G01N21/95 ,  G01B9/02 ,  G01B11/16 ,  G01B9/021

CPC classification number: G01N21/9505 ,  G01B9/02011 ,  G01B9/021 ,  G01B11/164 ,  G01B11/2441 ,  G01N21/1717 ,  G01N21/23 ,  G01N21/9501 ,  G01N2021/1721 ,  G01N2201/12 ,  H01L22/12

Abstract: Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of device development and manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for testing and evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures or within the internal surfaces of the semiconductor device at any stage of development or manufacture.