Invention Grant
- Patent Title: Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light
- Patent Title (中): 热处理方法和通过用光照射基板来加热基板的热处理装置
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Application No.: US13468408Application Date: 2012-05-10
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Publication No.: US08901460B2Publication Date: 2014-12-02
- Inventor: Kazuyuki Hashimoto , Tatsufumi Kusuda
- Applicant: Kazuyuki Hashimoto , Tatsufumi Kusuda
- Applicant Address: JP
- Assignee: Dainippon Screen Mfg. Co., Ltd
- Current Assignee: Dainippon Screen Mfg. Co., Ltd
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2011-107823 20110513
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/26 ; F27B5/18 ; F27D19/00 ; F27D21/00 ; G01J5/10 ; G01J5/54 ; H01L21/67 ; G01J5/00 ; F27B17/00 ; G01J5/02
Abstract:
After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started.
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