Invention Grant
- Patent Title: Semiconductor device, electronic device, and semiconductor device manufacturing method
- Patent Title (中): 半导体器件，电子器件和半导体器件制造方法
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Application No.: US13632268Application Date: 2012-10-01
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Publication No.: US08901751B2Publication Date: 2014-12-02
- Inventor: Kozo Shimizu , Seiki Sakuyama , Toshiya Akamatsu
- Applicant: Fujitsu Limited
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-221364 20111005; JP2012-178509 20120810
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/065 ; H01L23/00 ; H01L21/50 ; H01L23/538 ; H01L23/31
Abstract:
A semiconductor device, includes: a connection member including a first pad formed on a principal surface thereof; a semiconductor chip including a circuit-formed surface on which a second pad is formed, the chip mounted on the connection member so that the circuit-formed surface faces the principal surface; and a solder bump that connects the first and second pads and is made of metal containing Bi and Sn, wherein the bump includes a first interface-layer formed adjacent to the second pad, a second interface-layer formed adjacent to the first pad, a first intermediate region formed adjacent to either one of the interface-layers, and a second intermediate region formed adjacent to the other one of the interface-layers and formed adjacent to the first intermediate region; Bi-concentration in the first intermediate region is higher than a Sn-concentration; and a Sn-concentration in the second intermediate region is higher than a Bi-concentration.
Public/Granted literature
- US20130087912A1 SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2013-04-11
Information query
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