Invention Grant
- Patent Title: Antimonide-based compound semiconductor with titanium tungsten stack
- Patent Title (中): 锑化合物半导体与钛钨叠层
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Application No.: US13793251Application Date: 2013-03-11
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Publication No.: US08927354B2Publication Date: 2015-01-06
- Inventor: Yeong-Chang Chou , Jay Crawford , Jane Lee , Jeffrey Ming-Jer Yang , John Bradley Boos , Nicolas Alexandrou Papanicolaou
- Applicant: Northrop Grumman Systems Corporation , The United States of America As Represented by the Secretary of The Navy
- Applicant Address: US VA Falls Church US DC Washington
- Assignee: Northrop Grumman Systems Corporation,The United States of America As Represented by the Secretary of The Navy
- Current Assignee: Northrop Grumman Systems Corporation,The United States of America As Represented by the Secretary of The Navy
- Current Assignee Address: US VA Falls Church US DC Washington
- Agency: Carmen Patti Law Group, LLC
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/778 ; H01L29/66
Abstract:
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
Public/Granted literature
- US20130210219A1 ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR WITH TITANIUM TUNGSTEN STACK Public/Granted day:2013-08-15
Information query
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