Invention Grant
- Patent Title: Photo-semiconductor device and method of manufacturing the same
- Patent Title (中): 光半导体器件及其制造方法
-
Application No.: US13342304Application Date: 2012-01-03
-
Publication No.: US08927382B2Publication Date: 2015-01-06
- Inventor: Toshihiko Ouchi
- Applicant: Toshihiko Ouchi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2004-092403 20040326
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/8222 ; H01L31/101 ; G01J3/02 ; G01J3/42 ; G01N21/35 ; H01L31/0224 ; H01L31/0232
Abstract:
A method of manufacturing a photo-semiconductor device that has a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, and the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other.
Public/Granted literature
- US20120108004A1 PHOTO-SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-05-03
Information query
IPC分类:
