Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent

Invention Grant

US08927439B1 Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent 有权

Title translation: 用于由含有有机溶剂的涂料组合物形成氧化铝层的有机铝材料

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Patent Title: Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent
Patent Title (中): 用于由含有有机溶剂的涂料组合物形成氧化铝层的有机铝材料
Application No.: US13947129

Application Date: 2013-07-22
Publication No.: US08927439B1

Publication Date: 2015-01-06
Inventor: Deyan Wang , Kathleen M. O'Connell , Peter Trefonas, III
Applicant: Rohm and Haas Electronic Materials LLC
Applicant Address: US MA Marlborough
Assignee: Rohm and Haas Electronic Materials LLC
Current Assignee: Rohm and Haas Electronic Materials LLC
Current Assignee Address: US MA Marlborough
Agent S. Matthew Cairns
Main IPC: H01L21/473
IPC: H01L21/473 ; H01L51/56 ; H01L21/02 ; H01L51/52 ; H01L51/44

Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent

Abstract:

Organoaluminum coating compositions are used to deposit films on various substrates, which films are subsequently cured to form oxide films useful in a variety of manufacturing applications, particularly where a gas barrier may be used.

Abstract(Chinese):

有机铝涂料组合物用于在各种基材上沉积膜，该膜随后固化以形成用于各种制造应用的氧化物膜，特别是在可以使用气体阻挡层的情况下。

Public/Granted literature

US20150024607A1 ORGANOALUMINUM MATERIALS FOR FORMING ALUMINUM OXIDE LAYER FROM COATING COMPOSITION THAT CONTAINS ORGANIC SOLVENT Public/Granted day:2015-01-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/471	.......无机层（H01L21/475，H01L21/4757优先）
H01L21/473	........由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层