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    Photoresist topcoat compositions and methods of processing photoresist compositions
    2.
    发明授权
    Photoresist topcoat compositions and methods of processing photoresist compositions 有权

    公开(公告)号：US10578969B2

    公开(公告)日：2020-03-03

    申请号：US16245631

    申请日：2019-01-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/09 ,  G03F7/038 ,  B05C11/08 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027 ,  G03F7/40 ,  G03F7/38 ,  G03F7/20

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

    Compositions and processes for immersion lithography
    5.
    发明授权
    Compositions and processes for immersion lithography 有权
    浸没光刻的组成和工艺

    公开(公告)号：US09563128B2

    公开(公告)日：2017-02-07

    申请号：US14270271

    申请日：2014-05-05

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Deyan Wang

    IPC: G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075

    CPC classification number: G03F7/0392 ,  G03F7/0046 ,  G03F7/0047 ,  G03F7/0382 ,  G03F7/0757 ,  G03F7/0758 ,  G03F7/2041

    Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

    Abstract translation: 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种可与抗蚀剂的树脂组分基本上不可混合的材料。 本发明的另外优选的光致抗蚀剂组合物包括1）Si取代，2）氟取代; 3）超支化聚合物; 和/或4）聚合物颗粒。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

    Methods and compositions for removal of metal hardmasks
    9.
    发明授权
    Methods and compositions for removal of metal hardmasks 有权
    用于去除金属硬掩模的方法和组合物

    公开(公告)号：US09102901B2

    公开(公告)日：2015-08-11

    申请号：US13786834

    申请日：2013-03-06

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Deyan Wang ,  Martin W. Bayes ,  Peter Trefonas ,  Kathleen M. O'connell

    IPC: C11D3/04 ,  C11D11/00

    CPC classification number: C11D3/046 ,  C09K13/00 ,  C09K13/08 ,  C11D11/0047 ,  H01L21/0332 ,  H01L21/32134

    Abstract: The invention provides a process for removing a film from a substrate, said process comprising applying a composition to the film, and wherein the composition comprises at least the following: a) water; and b) at least one compound selected from the following compounds (i-v): i) NR4HF2 (Formula 1), wherein R═H, alkyl, substituted alkyl, ii) NR4F (Formula 2), wherein R═H, alkyl, substituted alkyl, iii) HF (hydrofluoric acid), iv) H2SiF6 (hexafluorosilicic acid), or v) combinations thereof. The invention also provides a composition comprising at least the following: a) water; and b) at least one compound selected from the following compounds (i-v): i) NR4HF2 (Formula 1), wherein R═H, alkyl, substituted alkyl, ii) NR4F (Formula 2), wherein R═H, alkyl, substituted alkyl, iii) HF (hydrofluoric acid), iv) H2SiF6 (hexafluorosilicic acid), or v) combinations thereof.

    Abstract translation: 本发明提供了一种从基材中除去膜的方法，所述方法包括将组合物施加到膜上，并且其中所述组合物至少包含以下物质：a）水; 和b）至少一种选自以下化合物（iv）的化合物：i）NR 4 HF 2（式1），其中R = H，烷基，取代的烷基，ii）NR 4 F（式2），其中R = H，烷基， 烷基，iii）HF（氢氟酸），iv）H 2 SiF 6（六氟硅酸）或v）其组合。 本发明还提供至少包含以下物质的组合物：a）水; 和b）至少一种选自以下化合物（iv）的化合物：i）NR 4 HF 2（式1），其中R = H，烷基，取代的烷基，ii）NR 4 F（式2），其中R = H，烷基， 烷基，iii）HF（氢氟酸），iv）H 2 SiF 6（六氟硅酸）或v）其组合。

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