Invention Grant
- Patent Title: Optoelectronic semiconductor chip and method for producing same
- Patent Title (中): 光电半导体芯片及其制造方法
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Application No.: US12921379Application Date: 2009-03-13
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Publication No.: US08928052B2Publication Date: 2015-01-06
- Inventor: Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
- Applicant: Karl Engl , Lutz Hoeppel , Patrick Rode , Matthias Sabathil
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102008016524 20080331; DE102008032318 20080709
- International Application: PCT/DE2009/000354 WO 20090313
- International Announcement: WO2009/121319 WO 20091008
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113 ; H01L33/38 ; H01L33/40 ; H01L33/46 ; H01L33/62

Abstract:
An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places.
Public/Granted literature
- US20110049555A1 Optoelectronic Semiconductor Chip and Method for Producing Same Public/Granted day:2011-03-03
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