Invention Grant
US08934285B2 Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell
有权
用于在电阻随机存取存储器的单元中形成触点的方法和装置，以减小编程单元所需的电压
- Patent Title: Method and apparatus for forming a contact in a cell of a resistive random access memory to reduce a voltage required to program the cell
- Patent Title (中): 用于在电阻随机存取存储器的单元中形成触点的方法和装置，以减小编程单元所需的电压
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Application No.: US14050720Application Date: 2013-10-10
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Publication No.: US08934285B2Publication Date: 2015-01-13
- Inventor: Pantas Sutardja , Albert Wu , Winston Lee , Peter Lee , Runzi Chang
- Applicant: Marvell World Trade Ltd.
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L45/00
Abstract:
A cell of a resistive random access memory including a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode. The first surface defines a first surface area, and the second surface defines a second surface area. The first surface area is greater than the second surface area.
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