Invention Grant
US08936981B2 Method for fabricating semiconductor device with mini SONOS cell
有权
用于制造具有迷你SONOS单元的半导体器件的方法
- Patent Title: Method for fabricating semiconductor device with mini SONOS cell
- Patent Title (中): 用于制造具有迷你SONOS单元的半导体器件的方法
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Application No.: US14108298Application Date: 2013-12-16
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Publication No.: US08936981B2Publication Date: 2015-01-20
- Inventor: Ya Ya Sun
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/336 ; H01L21/76 ; H01L27/115 ; H01L21/28 ; H01L21/762 ; H01L29/66
Abstract:
A method for fabricating a semiconductor device with mini-SONOS cell is disclosed. The method includes: providing a semiconductor substrate having a first MOS region and a second MOS region; forming a first trench in the semiconductor substrate between the first MOS region and the second MOS region; depositing a oxide liner and a nitride liner in the first trench; forming a STI in the first trench; removing a portion of the nitride liner for forming a second trench between the first MOS region of the semiconductor substrate and the STI and a third trench between the STI and the second MOS region of the semiconductor substrate; and forming a first conductive type nitride layer in the second trench.
Public/Granted literature
- US20140099775A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH MINI SONOS CELL Public/Granted day:2014-04-10
Information query
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