Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US13823945Application Date: 2012-03-26
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Publication No.: US08945411B2Publication Date: 2015-02-03
- Inventor: Tetsuhiro Iwai
- Applicant: Tetsuhiro Iwai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2011-089262 20110413
- International Application: PCT/JP2012/002078 WO 20120326
- International Announcement: WO2012/140837 WO 20121018
- Main IPC: G01L21/30
- IPC: G01L21/30 ; G01R31/00 ; B05C13/00 ; H01L21/673 ; H01L21/677 ; H01L21/68 ; H01L21/687 ; B44C1/22 ; C23C16/50
Abstract:
The present invention is to achieve a reduction both in size of a plasma processing apparatus and an installation area thereof. A dry etching apparatus includes a stock unit that includes a cassette storing a tray that can be conveyed and that stores substrates. In a conveying unit storing a conveying apparatus of the tray, a rotary stage is provided. Rotational angular position adjustment of the tray is performed by rotating the rotary stage placed on the tray before being subjected to dry etching and detecting a notch by a notch detecting sensor.
Public/Granted literature
- US20130180953A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2013-07-18
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