Invention Grant
US08946617B2 Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage
有权
具有p-n结的光电二极管，由于施加了可变电压而具有空间电荷区域的扩展变化
- Patent Title: Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltage
- Patent Title (中): 具有p-n结的光电二极管，由于施加了可变电压而具有空间电荷区域的扩展变化
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Application No.: US13293930Application Date: 2011-11-10
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Publication No.: US08946617B2Publication Date: 2015-02-03
- Inventor: Juergen Holz , Andre Wachowiak , Stefan Slesazeck
- Applicant: Juergen Holz , Andre Wachowiak , Stefan Slesazeck
- Applicant Address: DE Dresden
- Assignee: NaMLab gGmbH
- Current Assignee: NaMLab gGmbH
- Current Assignee Address: DE Dresden
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102010043822 20101112
- Main IPC: G01J3/50
- IPC: G01J3/50 ; G01J1/42 ; H01L27/144 ; H01L31/103
Abstract:
A photodiode comprises a semiconductor material having a p-n junction, the p-n junction being located between a first doping region of a first doping type and a second doping region of a second doping type, the second doping region comprising a highly doped layer and a lightly doped layer. A photodiode further comprises a voltage source being capable to apply a variable voltage between the first doping region and the lightly doped layer of the second doping region in order to vary the expansion of a space charge zone of the p-n junction.
Public/Granted literature
- US20120286144A1 PHOTODIODE, PHOTODIODE ARRAY AND METHOD OF OPERATION Public/Granted day:2012-11-15
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