Invention Grant
US08951819B2 Wafer dicing using hybrid split-beam laser scribing process with plasma etch
有权
使用等离子体蚀刻的混合分束激光划线工艺进行晶片切割
- Patent Title: Wafer dicing using hybrid split-beam laser scribing process with plasma etch
- Patent Title (中): 使用等离子体蚀刻的混合分束激光划线工艺进行晶片切割
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Application No.: US13180021Application Date: 2011-07-11
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Publication No.: US08951819B2Publication Date: 2015-02-10
- Inventor: Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
- Applicant: Wei-Sheng Lei , Brad Eaton , Madhava Rao Yalamanchili , Saravjeet Singh , Ajay Kumar , Aparna Iyer
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B23K26/00 ; H01L21/3065 ; H01L21/78 ; H01L21/67
Abstract:
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
Public/Granted literature
- US20130017668A1 WAFER DICING USING HYBRID SPLIT-BEAM LASER SCRIBING PROCESS WITH PLASMA ETCH Public/Granted day:2013-01-17
Information query
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