Invention Grant
- Patent Title: Light emitting apparatus and method of fabricating the same
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Application No.: US12173265Application Date: 2008-07-15
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Publication No.: US08968822B2Publication Date: 2015-03-03
- Inventor: Shunpei Yamazaki , Masakazu Murakami , Satoshi Seo
- Applicant: Shunpei Yamazaki , Masakazu Murakami , Satoshi Seo
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2002-062763 20020307
- Main IPC: B05D7/00
- IPC: B05D7/00 ; H01L27/32 ; H01L27/12 ; H01L51/00 ; H01L51/56

Abstract:
Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation.
Public/Granted literature
- US20090061551A1 Light Emitting Apparatus and Method of Fabricating the Same Public/Granted day:2009-03-05
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