Invention Grant
- Patent Title: Ohmic contact to semiconductor layer
- Patent Title (中): 欧姆接触到半导体层
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Application No.: US13909621Application Date: 2013-06-04
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Publication No.: US08969198B2Publication Date: 2015-03-03
- Inventor: Mikhail Gaevski , Grigory Simin , Maxim S Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
- Applicant: Sensor Electronic Technology, Inc.
- Applicant Address: US SC Columbia
- Assignee: Sensor Electronic Technology, Inc.
- Current Assignee: Sensor Electronic Technology, Inc.
- Current Assignee Address: US SC Columbia
- Agency: LaBatt, LLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L29/20 ; H01L29/45
Abstract:
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
Public/Granted literature
- US20130320352A1 Ohmic Contact to Semiconductor Layer Public/Granted day:2013-12-05
Information query
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