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    Ultraviolet-based sterilization
    3.
    发明授权
    Ultraviolet-based sterilization 有权
    紫外线灭菌

    公开(公告)号：US09061082B2

    公开(公告)日：2015-06-23

    申请号：US13863547

    申请日：2013-04-16

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Remigijus Gaska ,  Michael Shur ,  Alexander Dobrinsky ,  Timothy James Bettles ,  Maxim S Shatalov

    IPC: G01J1/42 ,  A61L2/10 ,  A61N5/06 ,  A61L2/00

    CPC classification number: A61L2/10 ,  A61L2/0047 ,  A61N5/0601 ,  A61N5/0624 ,  A61N2005/0609 ,  A61N2005/0651 ,  A61N2005/0661

    Abstract: A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. The set of wave guiding structures can include at least one ultraviolet reflective surface having an ultraviolet reflection coefficient of at least thirty percent. Furthermore, the system can include a computer system for operating the ultraviolet radiation sources to deliver a target dose of ultraviolet radiation to the at least one target surface of the object.

    Abstract translation: 提供了一种用于对物体的至少一个表面进行灭菌的系统。 该系统包括一组紫外线辐射源和一组波导结构，其被配置为将具有一组目标属性的紫外线辐射引导到物体的至少一个表面上的期望位置。 该波导构造可包括至少一个具有至少百分之三十的紫外反射系数的紫外线反射表面。 此外，该系统可以包括用于操作紫外线辐射源以将目标剂量的紫外线辐射传送到物体的至少一个目标表面的计算机系统。

    Semiconductor Material Doping
    4.
    发明申请
    Semiconductor Material Doping 有权
    半导体材料掺杂

    公开(公告)号：US20140077154A1

    公开(公告)日：2014-03-20

    申请号：US13803753

    申请日：2013-03-14

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Maxim S Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur ,  Alexander Dobrinsky

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

    Abstract translation: 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

    Deep Ultraviolet Light Emitting Diode
    5.
    发明申请
    Deep Ultraviolet Light Emitting Diode 有权
    深紫外线发光二极管

    公开(公告)号：US20130193409A1

    公开(公告)日：2013-08-01

    申请号：US13803681

    申请日：2013-03-14

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Remigijus Gaska ,  Maxim S Shatalov ,  Michael Shur ,  Alexander Dobrinsky

    IPC: H01L33/32

    CPC classification number: H01L33/06 ,  G06F17/5068 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0058

    Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

    Abstract translation: 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。

    Semiconductor structure with inhomogeneous regions
    7.
    发明授权
    Semiconductor structure with inhomogeneous regions 有权
    具有不均匀区域的半导体结构

    公开(公告)号：US09331244B2

    公开(公告)日：2016-05-03

    申请号：US14189012

    申请日：2014-02-25

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Maxim S Shatalov ,  Alexander Dobrinsky ,  Alexander Lunev ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

    IPC: H01L33/00 ,  H01L33/32 ,  H01L33/10 ,  H01S5/022

    CPC classification number: H01L33/0025 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01S5/0224

    Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.

    Abstract translation: 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。

    Semiconductor material doping
    9.
    发明授权
    Semiconductor material doping 有权
    半导体材料掺杂

    公开(公告)号：US09287442B2

    公开(公告)日：2016-03-15

    申请号：US13803753

    申请日：2013-03-14

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Maxim S Shatalov ,  Remigijus Gaska ,  Jinwei Yang ,  Michael Shur ,  Alexander Dobrinsky

    IPC: H01L33/06 ,  H01L33/00 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/20 ,  H01L29/201 ,  H01L29/15 ,  H01L29/205 ,  H01L33/32 ,  H01L33/04 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343 ,  H01S5/34

    CPC classification number: H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/34333

    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

    Abstract translation: 提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。 选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。 例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致 量子阱。 另外，可以选择量子阱和/或相邻势垒的目标掺杂水平以促进穿过势垒的空穴的实际空间传递。 可以形成量子阱和相邻势垒，使得实际的带不连续性和/或实际掺杂水平对应于相关目标。

    Ohmic contact to semiconductor layer
    10.
    发明授权
    Ohmic contact to semiconductor layer 有权
    欧姆接触到半导体层

    公开(公告)号：US08969198B2

    公开(公告)日：2015-03-03

    申请号：US13909621

    申请日：2013-06-04

    Applicant: Sensor Electronic Technology, Inc.

    Inventor： Mikhail Gaevski ,  Grigory Simin ,  Maxim S Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

    IPC: H01L21/44 ,  H01L21/768 ,  H01L29/20 ,  H01L29/45

    CPC classification number: H01L21/768 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/452 ,  H01L33/38 ,  H01L2933/0016

    Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

    Abstract translation: 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件，其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火，所述条件被配置成确保形成该组金属突起。

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