Invention Grant
- Patent Title: Complete recrystallization of semiconductor wafers
- Patent Title (中): 半导体晶圆的完全再结晶
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Application No.: US13386597Application Date: 2010-07-22
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Publication No.: US08975093B2Publication Date: 2015-03-10
- Inventor: Alain Straboni
- Applicant: Alain Straboni
- Applicant Address: FR Buxerolles
- Assignee: S'Tile
- Current Assignee: S'Tile
- Current Assignee Address: FR Buxerolles
- Agency: Vedder Price PC
- Priority: FR0955179 20090724
- International Application: PCT/FR2010/051559 WO 20100722
- International Announcement: WO2011/010074 WO 20110127
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; H01L21/66 ; H01L21/687 ; F27D3/00 ; H01L21/67 ; H01L21/677 ; C30B1/02 ; C30B29/06 ; C30B35/00 ; C30B1/12
Abstract:
The instant disclosure relates to a device and method for recrystallising a silicon wafer or a wafer comprising at least one silicon layer. The silicon wafer or the at least one silicon layer of the wafer is totally molten.
Public/Granted literature
- US20120164760A1 COMPLETE RECRYSTALLIZATION OF SEMICONDUCTOR WAFERS Public/Granted day:2012-06-28
Information query
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