Invention Grant
- Patent Title: Semiconductor device and driving method thereof
- Patent Title (中): 半导体装置及其驱动方法
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Application No.: US13037491Application Date: 2011-03-01
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Publication No.: US08976155B2Publication Date: 2015-03-10
- Inventor: Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Takeshi Aoki
- Applicant: Yoshiyuki Kurokawa , Takayuki Ikeda , Munehiro Kozuma , Takeshi Aoki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-050776 20100308
- Main IPC: G06F3/042
- IPC: G06F3/042 ; G01J1/44 ; H04N5/378 ; H01L27/146

Abstract:
A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor.
Public/Granted literature
- US20110215861A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF Public/Granted day:2011-09-08
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