Invention Grant
US08986789B2 Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces
有权
用于可粘合晶片表面的应力减小的Ni-P / Pd叠层
- Patent Title: Stress-reduced Ni-P/Pd stacks for bondable wafer surfaces
- Patent Title (中): 用于可粘合晶片表面的应力减小的Ni-P / Pd叠层
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Application No.: US13124349Application Date: 2009-10-01
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Publication No.: US08986789B2Publication Date: 2015-03-24
- Inventor: Albrecht Uhlig , Josef Gaida , Christof Suchentrunk , Michael Boyle , Brian Washo
- Applicant: Albrecht Uhlig , Josef Gaida , Christof Suchentrunk , Michael Boyle , Brian Washo
- Applicant Address: DE Berlin
- Assignee: Atotech Deutschland GmbH
- Current Assignee: Atotech Deutschland GmbH
- Current Assignee Address: DE Berlin
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless
- Priority: EP08166889 20081017
- International Application: PCT/EP2009/062756 WO 20091001
- International Announcement: WO2010/043502 WO 20100422
- Main IPC: B05D3/10
- IPC: B05D3/10 ; H01L23/00 ; C23C18/16 ; C23C18/18 ; C23C18/36 ; C23C18/44 ; C23C18/54

Abstract:
The invention relates to a substrate having a bondable metal coating comprising, in this order, on an Al or Cu surface: (a) a Ni—P layer, (b) a Pd layer and, optionally, (c) an Au layer, wherein the thickness of the Ni—P layer (a) is 0.2 to 10 m, the thickness of the Pd layer (b) is 0.05 to 1.0 m and the thickness of the optional Au layer (c) is 0.01 to 0.5 m, and wherein the Ni—P layer (a) has a P content of 10.5 to 14 wt.-%. The deposit internal stress of the resulting Ni—P/Pd stack is not higher than 34.48M−Pa (5,000 psi). Further, a process for the preparation of such a substrate is described.
Public/Granted literature
- US20110200842A1 STRESS-REDUCED NI-P/PD STACKS FOR BONDABLE WAFER SURFACES Public/Granted day:2011-08-18
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