Invention Grant
- Patent Title: Method for the prevention of suspended silicon structure etching during reactive ion etching
- Patent Title (中): 在反应离子蚀刻期间防止悬浮硅结构蚀刻的方法
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Application No.: US13673223Application Date: 2012-11-09
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Publication No.: US08987845B2Publication Date: 2015-03-24
- Inventor: Ting-Hau Wu , Kuei-Sung Chang
- Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L27/14 ; G01L9/00 ; H04R23/00 ; H01L41/332 ; B81B3/00 ; B81C1/00
Abstract:
The present disclosure is directed to a device and its method of manufacture in which a protective region is formed below a suspended body. The protective region allows deep reactive ion etching of a bulk silicon body to form a MEMS device without encountering the various problems presented by damage to the silicon caused by backscattering of oxide during overetching periods of DRIE processes.
Public/Granted literature
- US20140131818A1 Method for the Prevention of Suspended Silicon Structure Etching During Reactive Ion Etching Public/Granted day:2014-05-15
Information query
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